Dispositivos Electrónicos en Estado Sólido – Ben Streetman, Sanjay Banerjee – 6ta Edición

1. Crystal Properties and Growth of Semiconductors.

2. Atoms and Electrons.

3. Energy Bands and Charge Carriers in Semiconductors.

4. Excess Carriers in Semiconductors.

5. Junctions.

6. Field-Effect Transistors.

7. Bipolar Junction Transistors.

8. Optoelectronic Devices.

9. Integrated Circuits.

10. High-Frequency and High-Power Devices.

Appendices

I. Definitions of Commonly Used Symbols.

II. Physical Constants and Conversion Factors.

III. Properties of Semiconductor Materials.

IV. Derivation of the Density of States in the Conduction Band.

V. Derivation of Fermi–Dirac Statistics.

VI. Dry and Wet Thermal Oxide Thickness Grown on Si (100) as a Function of Time and Temperature.

VII. Solid Solubilities of Impurities in Si.

VIII. Diffusivities of Dopants in Si and SiO2.

IX. Projected Range an Straggle as Function of Implant Energy in Si.